Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions

ABSTRACT

A semiconductor structure comprising a first transistor element and a second transistor element is provided. Stress in channel regions of the first and the second transistor element is controlled by forming stressed layers having a predetermined stress over the transistors. The stressed layers may be used as etch stop layers in the formation of contact vias through an interlayer dielectric formed over the transistors.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the formation of integrated circuits,and, more particularly, to the formation of field effect transistorshaving a channel region with a specified intrinsic stress to improve thecharge carrier mobility.

2. Description of the Related Arts

Integrated circuits comprise a large number of individual circuitelements, such as transistors, capacitors and resistors and the like.These elements are connected internally to form complex circuits, suchas memory devices, logic devices and microprocessors. The performance ofintegrated circuits can be improved by increasing the number offunctional elements in the circuit in order to increase itsfunctionality and/or by increasing the speed of operation of the circuitelements. A reduction of feature sizes allows the formation of a greaternumber of circuit elements on the same area, hence allowing an extensionof the functionality of the circuit, and also reduces signal propagationdelays, thus making an increase of the speed of operation of circuitelements possible.

Field effect transistors are used as switching elements in integratedcircuits. They allow control of a current flowing through a channelregion located between a source region and a drain region. The sourceregion and the drain region are highly doped. In N-type transistors, thesource and drain regions are doped with an N-type dopant. Conversely, inP-type transistors, the source and drain regions are doped with a P-typedopant. The doping of the channel region is inverse to the doping of thesource region and the drain region. The conductivity of the channelregion is controlled by a gate voltage applied to a gate electrodeformed above the channel region and separated therefrom by a thininsulating layer. Depending on the gate voltage, the channel region maybe switched between a conductive “on” state and a substantiallynon-conductive “off” state.

The source region, the drain region and the gate electrode of a fieldeffect transistor in an integrated circuit are connected to othercircuit elements by means of contact vias which are formed in a layer ofan interlayer dielectric over the transistor. Since the source and drainregions and the gate electrode have different heights, and a surface ofthe interlayer dielectric is substantially planar, the individualcontact vias have different depths. In the formation of the contactvias, a mask is formed on the interlayer dielectric which exposes thoseportions of the interlayer dielectric where the contact vias are to beformed. Then, an anisotropic etching process is performed. In order toavoid an etchant used in the etching process affecting the transistor,an etch stop layer is provided between the transistor and the interlayerdielectric. The etchant is adapted to selectively remove the interlayerdielectric, leaving a material of the etch stop layer substantiallyintact. Thus, the etching stops as soon as the etch front reaches theetch stop layer, irrespective of the height of the feature below thecontact via.

When reducing the size of field effect transistors, it is important tomaintain a high conductivity of the channel region in the “on” state.The conductivity of the channel region in the “on” state depends on thedopant concentration in the channel region, the mobility of the chargecarriers, the extension of the channel region in the width direction ofthe transistor and the distance between the source region and the drainregion, which is commonly denoted as “channel length.” While a reductionof the width of the channel region leads to a decrease of the channelconductivity, a reduction of the channel length enhances the channelconductivity. An increase of the charge carrier mobility leads to anincrease of the channel conductivity.

As feature sizes are reduced, the extension of the channel region in thewidth direction is also reduced. A reduction of the channel lengthentails a plurality of issues associated therewith. First, advancedtechniques of photolithography and etching have to be provided in orderto reliably and reproducibly create transistors having short channellengths. Moreover, highly sophisticated dopant profiles, in the verticaldirection as well as in the lateral direction, are required in thesource region and in the drain region in order to provide a low sheetresistivity and a low contact resistivity in combination with a desiredchannel controllability. Furthermore, a reduction of the channel lengthmay entail a need to reduce the depth of the source region and the drainregion with respect to the interface formed by the gate insulation layerand the channel region which may, in some approaches, be achieved byforming raised source and drain regions formed with a specified offsetto the gate electrode.

In view of the problems associated with a further reduction of thechannel length, it has been proposed to also enhance the performance offield effect transistors by increasing the charge carrier mobility inthe channel region. In principle, at least two approaches may be used toincrease the charge carrier mobility.

First, the dopant concentration in the channel region may be reduced.Thus, the probability of scattering events of charge carriers in thechannel region is reduced, which leads to an increase of theconductivity of the channel region. Reducing the dopant concentration inthe channel region, however, significantly affects the threshold voltageof the transistor device. This makes the reduction of dopantconcentration a less attractive approach.

Second, the lattice structure in the channel region may be modified bycreating tensile or compressive stress. This leads to a modifiedmobility of electrons and holes, respectively. A tensile stress in thechannel region increases the mobility of electrons. Depending on themagnitude of the tensile stress, an increase of the electron mobility ofup to 20% or more can be achieved. In an N-type transistor, this leadsto a corresponding increase of the conductivity of the channel region.Conversely, compressive stress in the channel region may increase themobility of holes, thereby providing the potential for enhancing theperformance of P-type transistors.

In a method of forming field effect transistors having stressed channelregions according to the state of the art, a layer comprising an alloyof silicon and germanium or an alloy of silicon and carbon,respectively, is introduced into the channel region in order to create atensile or compressive stress. Alternatively, such a stress-creatinglayer may be provided below the channel region.

A problem with the method of forming field effect transistors havingstressed channel regions according to the state of the art is that theformation of the stress-creating layer requires a considerablemodification of conventional and well-approved techniques used for theformation of field effect transistors. For instance, additionalepitaxial growth techniques have to be developed and implemented intothe process flow in order to form the stress-creating layers. Thus, thecomplexity of the formation of the transistors is significantlyincreased compared to the formation of transistors withoutstress-creating layers in or below the channel region.

In view of the above problem, a need exists for a method allowing thecreation of desired stress conditions in a field effect transistorwithout requiring substantial modifications to the manufacturingprocess.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

According to an illustrative embodiment of the present invention, amethod of forming a semiconductor structure comprises providing asubstrate. The substrate comprises a first transistor element and asecond transistor element. A first stressed layer is formed above thefirst transistor element and the second transistor element. The firststressed layer has a first predetermined intrinsic stress. A firstdielectric layer is formed above the first transistor element. The firstdielectric layer does not cover the second transistor element. A secondstressed layer is formed above the first dielectric layer and the secondtransistor element. The second stressed layer has a second predeterminedintrinsic stress that is different than the first predeterminedintrinsic stress. A second dielectric layer is formed above thesubstrate. The first dielectric layer and the second dielectric layerare planarized.

According to another illustrative embodiment of the present invention, amethod of forming a semiconductor structure comprises providing asubstrate. The substrate comprises a first transistor element having afirst channel region and a second transistor element having a secondchannel region. A first stressed layer is formed above the firsttransistor element and the second transistor element. The first stressedlayer has a first predetermined intrinsic stress. A second stressedlayer is formed above the first transistor element and the secondtransistor element. The second stressed layer has a second predeterminedintrinsic stress. A portion of the second stressed layer located abovethe first transistor element is selectively removed. The second channelregion is substantially unstressed and the first channel region isstressed.

According to yet another illustrative embodiment of the presentinvention, a semiconductor structure comprises a substrate. Thesubstrate comprises a first transistor element having a first channelregion and a second transistor element having a second channel region. Afirst stressed layer is formed above the first transistor element andthe second transistor element. The first stressed layer has a firstpredetermined intrinsic stress. A second stressed layer is formed abovethe second transistor element. The second stressed layer has a secondpredetermined intrinsic stress. The second stressed layer does not coverthe first transistor element. The second channel region is substantiallyunstressed and the first channel region is stressed.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIG. 1 shows a schematic cross-sectional view of a semiconductorstructure;

FIGS. 2 a-2 e show schematic cross-sectional views of a semiconductorstructure in stages of a manufacturing process according to anembodiment of the present invention; and

FIGS. 3 a-3 b show schematic cross-sectional views of a semiconductorstructure in stages of a manufacturing process according to anotherembodiment of the present invention.

While the invention is susceptible to various modifications andalternative forms, specific embodiments thereof have been shown by wayof example in the drawings and are herein described in detail. It shouldbe understood, however, that the description herein of specificembodiments is not intended to limit the invention to the particularforms disclosed, but on the contrary, the intention is to cover allmodifications, equivalents, and alternatives falling within the spiritand scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION OF THE INVENTION

Illustrative embodiments of the invention are described below. In theinterest of clarity, not all features of an actual implementation aredescribed in this specification. It will of course be appreciated thatin the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present invention will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present invention with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present invention. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

The present invention allows the formation of a semiconductor structurecomprising transistors, the channel regions of which are exposed todifferent mechanical stress. More particularly, the channel region ofone transistor in the semiconductor structure can be exposed to atensile stress, whereas the channel region of another transistor may beexposed to a compressive stress. In other embodiments, the channelregion of the first transistor can be stressed, whereas the channelregion of the second transistor is substantially unstressed.

The stress in the channel regions of the transistors can be created byforming stressed layers having a predetermined stress over thetransistors. In some embodiments of the present invention, the stressedlayers may be used as etch stop layers in the formation of contact viasthrough a layer of an interlayer dielectric formed over the transistors.

With reference to the drawings, further illustrative embodiments of thepresent invention will now be described in more detail. FIG. 1 shows aschematic cross-sectional view of a semiconductor structure 1. Thesemiconductor structure 1 comprises a substrate 2. The substrate 2comprises a first transistor element 3 and a second transistor element4. Shallow trench isolations 5, 6, 7 electrically insulate thetransistor elements 3, 4 from each other and from other circuit elementsin the semiconductor structure 1.

The first transistor element 3 comprises an active region 8. In theactive region 8, a source region 14 and a drain region 15 are formedadjacent a channel region 28. Over the channel region 28, a gateelectrode 12, which is separated from the active region 8 by a gateinsulation layer 10, is formed. Sidewall spacers 18, 19 are formedadjacent the gate electrode 12. The source region 14 comprises a metalsilicide region 22. Similarly, the drain region 15 comprises a metalsilicide region 23. A further metal silicide region 24 is formed in thegate electrode 24.

Similar to the first transistor element 3, the second transistor element4 comprises an active region 9, a source region 16, a drain region 17, achannel region 29, a gate electrode 13, a gate insulation layer 11,sidewall spacers 20, 21 and metal silicide regions 25, 26, 27 formed inthe source region 16, the drain region 17 and the gate electrode 13,respectively.

A method of forming the semiconductor structure 1 will be described withreference to FIG. 1. First, the trench isolations 5, 6, 7 and the activeregions 8, 9 are formed in the substrate 2. Then, the gate insulationlayers 10, 11 and the gate electrodes 12, 13 are formed over thesubstrate 2. This can be done by means of advanced techniques of ionimplantation, oxidation, deposition and photolithography. Subsequently,dopant ions are implanted into the source regions 14, 16 and the drainregions 15, 17. Then, the sidewall spacers 18, 19, 20, 21 are formedadjacent the gate electrodes 12, 13, which may be done by means ofconformally depositing a layer of a spacer material over the substrate 2and performing an anisotropic etching process, as known to personsskilled in the art. The source regions 14, 16 and the drain regions 15,17 are then completed by a further implantation of dopant ions. In thisimplantation, the sidewall spacers 18, 19, 20, 21 protect portions ofthe source regions 14, 16 and the drain regions 15, 17 adjacent the gateelectrodes 12, 13 from being irradiated with ions. Thus, the source anddrain regions comprise source extensions and drain extensions,respectively, which are shallower than the rest of the source and drainregions. Finally, the metal silicide regions 22, 23, 24, 25, 26, 27 areformed by depositing a metal layer over the substrate 2 and annealingthe semiconductor structure 1 to initiate a chemical reaction betweenthe metal and the silicon in the source regions 14, 16, the drainregions 15, 17 and the gate electrodes 12, 13.

In some embodiments of the present invention, one of the transistorelements 3, 4 is a P-type transistor, whereas the other of thetransistor elements 3, 4 is an N-type transistor. In such embodiments,in each of the ion implantation processes performed in the formation ofthe source regions 14, 16 and the drain regions 15, 17, one of thetransistor elements 3, 4 is covered by a first mask (not shown). Then,the semiconductor structure 1 is irradiated with ions of a first dopant,e.g., a P-type dopant such as boron. Subsequently, the first mask isremoved and the other transistor element is covered by a second mask(not shown). Then, the semiconductor structure 1 is irradiated with ionsof a second dopant, e.g., an N-type dopant such as arsenic.

Further stages of a method of forming a semiconductor structureaccording to the present invention are shown in FIGS. 2 a-2 e. First, asemiconductor structure 1 as described above with reference to FIG. 1 isprovided. A first stressed layer 201 is formed over the first transistorelement 3 and the second transistor element 4. The first stressed layer201 has a first predetermined intrinsic stress.

The first stressed layer 201 can be formed by a variety of techniques,for example, by means of plasma enhanced chemical vapor deposition.Plasma enhanced chemical vapor deposition is a method of depositing amaterial on a deposition surface. In the formation of the layer 201, thedeposition surface may comprise surfaces of the source regions 14, 16,the drain regions 15, 17, the gate electrodes 12, 13, the sidewallspacers 18, 19, 20, 21 and the shallow trench isolations 5, 6, 7. Thedeposited material is formed as a result of a chemical reaction betweengaseous reactants, which occurs on or in the vicinity of the depositionsurface. Solid products of the reaction are deposited on the depositionsurface. The chemical reaction occurs in a plasma, which may be created,for example, by means of a glow discharge. The glow discharge can begenerated by applying a radio frequency alternating voltage between twoelectrodes, one of which is provided close to the semiconductorstructure 1. In addition to the radio frequency alternating voltage, adirect voltage or a low frequency alternating voltage, which is denotedas “bias voltage,” may be applied between the electrodes. In the glowdischarge, molecules of the gaseous reactant are decomposed into avariety of species including radicals, ions, atoms and molecules inexcited states. These species impinge on the deposition surface and arechemically bond to the deposition surface. Thus, a layer of material isdeposited on the deposition surface.

The first predetermined intrinsic stress can be determined by thedeposition conditions applied in the formation of the first stressedlayer 201. In general, the first predetermined stress depends on the gasmixture, the deposition rate, the temperature, the radio frequencyalternating voltage and the bias voltage. The amount of tensile orcompressive stress in the layer 201 can be adjusted, for instance, byvarying one or more of these parameters. In particular, the bias voltagemay be varied to adjust an ion bombardment during the depositionprocess, thereby creating tensile or compressive stress in the firststressed layer 201. In one illustrative embodiment, the layer 201 mayhave an intrinsic stress having an absolute value ranging fromapproximately 300-800 MPa, and it may have a thickness ranging fromapproximately 40-100 nm or more.

The first stressed layer 201 may comprise a dielectric material, e.g.,silicon nitride. A tensile stress in the first stressed layer 201 whencomprising silicon nitride may be created by significantly reducing orturning off the bias voltage. On the other hand, a moderately high biasvoltage creates compressive stress in the first stressed layer 201.

After the formation of the first stressed layer 201, a first dielectriclayer 202 is deposited over the semiconductor structure 1. A thicknessof the first dielectric layer 202 can be greater than a height of thegate electrodes 12, 13 covered with the first stressed layer 201. Due tothe topology of the underlying semiconductor structure 1, a surface ofthe first dielectric layer 202 is uneven. In particular, the firstdielectric layer 202 comprises bumps over the gate electrodes 12, 13.

The first dielectric layer 202 can be deposited by means of chemicalvapor deposition, plasma enhanced chemical vapor deposition or any otherdeposition process known to persons skilled in the art. The firstdielectric layer 202 may comprise silicon dioxide.

FIG. 2 b show a schematic cross-sectional view of the semiconductorstructure 1 in a later stage of the manufacturing process. The firstdielectric layer 202 is patterned by removing a portion of the firstdielectric layer 202 located over the second transistor element 4. Thismay be done by means of techniques of photolithography and etchingtechniques known to persons skilled in the art. After the patterning,the first dielectric layer 202 does not cover the second transistorelement 4.

A portion of the first stressed layer 201 located over the secondtransistor element 4 may be removed after the patterning of the firstdielectric layer 202. This can be done by means of an etching process.In one embodiment, the first dielectric layer 202 functions as a mask,protecting a portion of the first stressed layer 201 located over thefirst transistor element 3 from being exposed to an etchant.

The etching process may comprise exposing the semiconductor structure 1to an etchant adapted to selectively remove the material of the firststressed layer 201, leaving the material of the first dielectric layer202 and the materials of the shallow trench isolations 6, 7, thesidewall spacers 18, 19 and the metal silicide regions 24, 27substantially intact.

In other embodiments of the present invention, the first stressed layer201 may comprise a thin liner layer (not shown) which is formed betweenthe layer 201 and the first transistor element 3 and the secondtransistor element 4. The liner layer may act as an etch stop layer,protecting the first transistor element 3 and the second transistorelement 4 from being affected by the etchant and/or may provide anindication when the portion of the first stressed layer over the secondtransistor element is removed.

In further embodiments of the present invention, the first stressedlayer 201 is left on both of the first transistor element 3 and thesecond transistor element 4.

A second stressed layer 203 is formed over the first dielectric layer202 and the second transistor element 4. The second stressed layer 203has a second predetermined stress. Portions 203 a, 203 c of the secondstressed layer are located over the first dielectric layer 202 and thesecond transistor element 4, respectively. A further portion 203 b ofthe second stressed layer 203 is located over an edge of the firstdielectric layer 202. The edge of the first dielectric layer 202 isformed in the patterning of the first dielectric layer 202 which isperformed to uncover the second transistor element 4. The secondstressed layer may comprise a dielectric material, e.g., siliconnitride.

The formation of the second stressed layer 203 can comprise anon-conformal deposition process adapted to deposit a stressed layer ofa material over the first dielectric layer 202 and the second transistorelement 4. In non-conformal deposition, a thickness of the depositedlayer of material, measured in a direction perpendicular to theunderlying portion of the deposition surface, depends on the slope ofthe underlying portion of the deposition surface. In particular, athickness of weakly inclined portions of the second stressed layer 203,such as portions 203 a, 203 c, is greater than a thickness of portion203 b formed over the steep edge of the first dielectric layer 202.

Non-conformal deposition may be performed by applying a moderately highbias voltage in plasma enhanced chemical vapor deposition, the electrodeclose to the semiconductor structure 1 being negatively charged. Thus,ions in the plasma are accelerated in a direction perpendicular to thesurface of the substrate 2. The motion of the ions in the directionperpendicular to the substrate 2 entails a material transport in thisdirection. The transported material is preferentially deposited onweakly inclined portions of the semiconductor structure 1. Therefore,the second stressed layer 203 has a greater thickness on the weaklyinclined portions than on steep portions of the semiconductor structure1. In one illustrative embodiment of the present invention, portions ofthe second stressed layer 203 over weakly inclined portions of thesemiconductor structure may have a thickness in a range fromapproximately 40-100 nm or more. Portions of the second stressed layer203 over steep portions of the semiconductor structure 203 may have athickness in a range from approximately 20-80 nm or more.

The second predetermined stress can be compressive or tensile. Inembodiments of the present invention wherein the first predeterminedstress is tensile, the second predetermined stress can be compressive.Creating a tensile stress in the first stressed layer and a compressivestress in the second stressed layer is particularly advantageous if thematerial of the second stressed layer is deposited non-conformally,since the moderately high bias voltage used in the non-conformaldeposition may favor the creation of a compressive intrinsic stress. Inparticular, this is the case if the second stressed layer comprisessilicon nitride. An absolute value of the second predetermined stressmay be in a range from about 300-800 MPa.

A further stage of the manufacturing process is shown in FIG. 2 c. Anisotropic etching process being adapted to substantially remove theportion 203 b of the second stressed layer located over the edge of thefirst dielectric layer 202 can be performed.

In isotropic etching, a rate at which material is removed issubstantially independent of the slope of the etched surface. Portions203 a and 203 c of the second stressed layer 203 are etched atsubstantially the same rate as the portion 203 b located over the edgeof the first dielectric layer 202. Since the portion 203 b of the secondstressed layer is thinner than the portions 203 a, 203 c, it is thusremoved more quickly than the portions 203 a, 203 c. The etching processis stopped as soon as the portion 203 b is substantially removed. Hence,parts of portions 203 a and 203 c remain on the semiconductor structure1. The material loss in portions 203 a, 203 c may be taken into accountin advance by correspondingly increasing the deposited thickness of thesecond stressed layer 203. In one illustrative embodiment of the presentinvention, the etch process may be adapted to remove a portion of thesecond stressed layer having a thickness in a range from about 20-50 nmor more.

In some embodiments of the present invention, the isotropic etching mayremove portions of the second stressed layer 203 located over thesidewall spacers 20, 21 which have a greater slope than, e.g., portionslocated over the source region 16 and the drain region 17 of the secondtransistor element 4.

In other embodiments of the present invention, no etching process isperformed, and the portion 203 b of the second stressed layer 203 isleft on the semiconductor structure 1. In such embodiments, thedeposition of the second stressed layer 203 need not be non-conformal.Instead, the second stressed layer 203 can be deposited conformally.

FIG. 2 d shows a schematic cross-sectional view of the semiconductorstructure 1 in a further stage of the manufacturing process. A seconddielectric layer 204 is formed over the substrate 1. Similar to thefirst dielectric layer 202, the second dielectric layer 204 may beformed by chemical vapor deposition, plasma enhanced chemical vapordeposition, or any other deposition process known to persons skilled inthe art. A thickness of the second dielectric layer 204 is greater thana height of the gate electrodes 12, 13 of the first transistor element12 and the second transistor element 13.

The second dielectric layer 204 can be formed from the same material asthe first dielectric layer 202. In particular, both the first dielectriclayer 202 and the second dielectric layer 204 can comprise silicondioxide. In other embodiments of the present invention, however, thefirst dielectric layer 202 and the second dielectric layers may comprisedifferent materials.

The second dielectric layer 204 covers the portion 203 a of the secondstressed layer 203, and the second transistor element 4, which iscovered by the portion 203 c of the second stressed layer 203. Inembodiments of the present invention where the portion 203 b of thesecond stressed layer covering the edge of the first dielectric layer202 is removed, the second dielectric layer 204 adjoins to the firstdielectric layer 202. Due to the topography of the first dielectriclayer 202 and the second transistor element 4, a surface of the seconddielectric layer is uneven. In particular, the surface of the seconddielectric layer 204 comprises a bump over the gate electrode 13 of thesecond transistor element 4, and an elevation over the first transistorelement 3, where the first dielectric layer 202 and the portion 203 a ofthe first dielectric layer 203 are located under the second dielectriclayer 204.

A schematic cross-sectional view of the semiconductor structure 1 in yetanother stage of the manufacturing process is shown in FIG. 2 e. Thefirst dielectric layer 202 and the second dielectric layer 204 areplanarized. This can be done by means of chemical mechanical polishing.In chemical mechanical polishing, the semiconductor structure 1 is movedrelative to a polishing pad. Slurry is supplied to an interface betweenthe semiconductor structure 1 and the polishing pad. The slurrycomprises a chemical compound reacting with the material or materials onthe surface of the semiconductor structure 1. The reaction product isremoved by abrasives contained in the slurry and/or the polishing pad.

In the planarization, a portion of the second dielectric layer 204located over the first dielectric layer 202, the portion 203 a of thesecond stressed layer 203 and the bump of the first dielectric layer 202over the gate electrode 12 of the first transistor element 3 areremoved. After the planarization, the first dielectric layer 202 and thesecond dielectric layer 204 have a common, planar surface.

In embodiments of the present invention wherein the first dielectriclayer 202 and the second dielectric layer 204 are formed from the samematerial, and the portion 203 b of the second stressed layer 203 isremoved, the semiconductor structure is covered by a continuousdielectric layer having a planar surface, similar to interlayerdielectrics known to persons skilled in the art. Thus, advantageouslyknown methods may be applied for the further processing of thesemiconductor structure 1 substantially without any modification.

After the planarization, contact vias 205, 206, 207 are formed in thefirst dielectric layer 202. In the second dielectric layer 204, contactvias 208, 209, 210 are formed. As is well known to persons skilled inthe art, this can be done by photolithographically forming a mask overthe first dielectric layer 202 and the second dielectric layer whichexposes portions of the dielectric layers 202, 204 wherein the contactvias 205-210 are to be formed. Subsequently, an anisotropic etchingprocess is performed which is adapted to selectively remove the materialof the first dielectric layer 202 and the material of the seconddielectric layer 204 while an etch rate of the first stressed layer 201and the second stressed layer 203 is significantly lower. Thus, theremoval of material is reliably stopped within the first stressed layer201 or the second stressed layer 203. Hence, the stressed layers 201,203 function as etch stop layers.

Subsequently, an etching process adapted to remove the first stressedlayer 201 and/or the second stressed layer is performed. The etchingprocess can comprise exposing the semiconductor structure 1 to anetchant adapted to selectively remove the material of the first stressedlayer 201 and the second stressed layer 203, leaving the silicide in themetal silicide regions 22, 23, 24, 25, 26, 27 and the material of thefirst dielectric layer 202 and the second dielectric layer 204substantially intact.

In other embodiments of the present invention, the first stressed layer201 and/or the second stressed layer 203 may comprise a thin liner layer(not shown) at the underside thereof which separates the stressed layersfrom the first transistor element 3 and the second transistor element 4.The liner layer may act as an etch stop layer, protecting the transistorelements 3, 4 from being affected in the etching process, and/or mayprovide an indication when the first stressed layer 201 and/or thesecond stressed layer 203 are removed from the bottom of the contactvias 205-210.

Finally, the contact vias 205-210 can be filled with an electricallyconductive material which may include a metal such as, e.g., tungsten.When filled with the electrically conductive material, the contact via205 provides electrical contact to the source region 14, the contact via206 provides electrical contact to the gate electrode 12 and the contactvia 207 provides electrical contact to the drain region 15. Similarly,the contact via 208 provides electrical contact to the source region 16,the contact via 209 provides electrical contact to the gate electrode 13and the contact via 210 provides electrical contact to the drain region17.

In embodiments of the present invention wherein a portion of the firststressed layer 201 located over the second transistor element 4 isremoved after the formation of the first dielectric layer, after thecompletion of the method described above, the first transistor element 3is covered by the first stressed layer 201 and the second transistorelement 4 is covered by the second stressed layer 203. In otherembodiments, wherein the first stressed layer 201 is left on the secondtransistor element 4, the first transistor element 3 is covered by thefirst stressed layer, whereas the second transistor element 4 is coveredboth by the first stressed layer 201 and the second stressed layer 203.

Due to the intrinsic stress in the first stressed layer 201 and thesecond stressed layer 203, these layers exert elastic forces to thetransistor elements 3, 4. Since the first stressed layer 201 and thesecond stressed layer 203 cover large areas of the first transistorelement 3 and the second transistor element 4, these elastic forces maymodify the stress in the transistor elements 3, 4, and, in particular,the stress in the channel regions 28, 29. The stress in the channelregion 28 of the first transistor element 3 is influenced by the firstpredetermined intrinsic stress of the first stressed layer 201.

In embodiments of the present invention wherein the first stressed layer201 is removed from the second transistor element 4, the stress in thechannel region 29 of the second transistor element 4 is influenced bythe second predetermined intrinsic stress of the second stressed layer203. Hence, if the first predetermined intrinsic stress is tensile andthe second predetermined intrinsic stress is compressive, the channelregion 28 is subjected to a tensile stress and the channel region 29 issubjected to a compressive stress. A tensile first predeterminedintrinsic stress improves the mobility of electrons in the channelregion 28, which is particularly advantageous if the first transistorelement 3 is an N-type transistor. A compressive second predeterminedintrinsic stress improves the mobility of holes in the channel region29, which is particularly advantageous if the second transistor elementis a P-type transistor. Conversely, a compressive first predeterminedintrinsic stress and a tensile second predetermined intrinsic stress areadvantageous if the first transistor element 3 is a P-type transistorand the second transistor element 4 is an N-type transistor.

In other embodiments, wherein the second transistor element 4 is coveredboth by the first stressed layer 201 and the second stressed layer 203,both the first predetermined intrinsic stress and the secondpredetermined intrinsic stress influence the stress in the channelregion 29. If one of the first and the second predetermined intrinsicstresses is tensile and the other is compressive, the influence of thesecond predetermined intrinsic stress may totally or partiallycompensate the influence of the first predetermined stress, such thatthe channel region 29 is subjected to a considerably lower stress thanthe channel region 28. In some embodiments of the present invention, thechannel region 28 is stressed, whereas the channel region 29 issubstantially unstressed.

The first predetermined intrinsic stress and the second predeterminedintrinsic stress may be controlled to adjust the stress in each of thechannel regions 28, 29. To this end, known methods for measuring thestress in the channel region of a field effect transistor, such as X-raydiffraction, may be used. A plurality of semiconductor structuressimilar to the semiconductor structure 1 are formed. In the formation ofeach of these semiconductor structures, different parameters are used inthe deposition of the first stressed layer 201 and/or the secondstressed layer 203 to obtain different values of the first predeterminedintrinsic stress and the second predetermined intrinsic stress. Then,the stress in the channel regions of field effect transistors in each ofthe semiconductor structures is measured to relate the first and thesecond predetermined intrinsic stress to the stress in the channelregions. Based on the relation between the intrinsic stress in thelayers 201, 203 and the stress in the channel regions, values of thefirst predetermined intrinsic stress and the second predeterminedintrinsic stress may be determined which yield a respective desiredstress in each of the channel regions 28, 29.

In other embodiments of the present invention, the first and the secondpredetermined intrinsic stress may be controlled to adjust a respectivecharge carrier mobility in each of the channel regions 28, 29. To thisend, a plurality of semiconductor structures similar to thesemiconductor structure 1 can be formed, each having a different firstpredetermined stress and/or a different second predetermined intrinsicstress than the other semiconductor structures. Then, the charge carriermobility in the channel regions of the transistor elements in each ofthe semiconductor structures is measured using methods known to personsskilled in the art, and a relation between the first and the secondpredetermined stress and the charge carrier mobility is determined.Values of the first predetermined intrinsic stress and the secondpredetermined intrinsic stress yielding a desired charge carriermobility can be obtained from this relation.

In the present invention, stress is created in the channel regions offield effect transistors by means of the first stressed layer 201 andthe second stressed layer 203, which may be used as etch stop layers inthe formation of contact vias and, thus, may replace etch stop layersused in conventional methods of forming a field effect transistor.Advantageously, providing the first stressed layer 201 and the secondstressed layer 203 does not require substantial modifications of theformation of the first transistor element 3 and the second transistorelement 4 compared to methods known in the art.

A method of forming a semiconductor structure according to a furtherembodiment of the present invention will be described with reference toFIGS. 3 a and 3 b. A semiconductor structure 1 as described above withreference to FIG. 1 is provided. Over the semiconductor structure 1, afirst stressed layer 301 having a first predetermined intrinsic stressis formed. A second stressed layer 302 having a second predeterminedintrinsic stress is deposited over the first stressed layer 301. Thesecond stressed layer 302 comprises a portion 302 a over the firsttransistor element 3 and a portion 302 b over the second transistorelement 4.

Similar to the first stressed layer 201 and the second stressed layer203 in the embodiment of the present invention described above withreference to FIGS. 2 a-2 e, the stressed layers 301, 302 can bedeposited by a variety of techniques, e.g., by means of plasma enhancedchemical vapor deposition. The first predetermined intrinsic stress andthe second predetermined intrinsic stress may be controlled by varyingone or more parameters comprising at least one of the composition of thereactant gas, the deposition rate, the temperature, the radio frequencyalternating voltage or the bias voltage.

The first transistor element 3 can be an N-type transistor. The secondtransistor element 4 can be a P-type transistor. The first predeterminedintrinsic stress can be tensile, and the second predetermined intrinsicstress can be compressive.

A mask 303 is formed over the second transistor element 3. The mask 303can comprise a photoresist. As is well known to persons skilled in theart, a mask comprising a photoresist can be formed by applying thephotoresist to the semiconductor structure 1, exposing the photoresistthrough a reticle and solving either the portions irradiated in theexposure or the non-irradiated portions in a developer.

In other embodiments, the mask 303 can comprise a hard mask similar tothe first dielectric layer 202 in the embodiment described withreference to FIGS. 2 a-2 e. The hard mask may be formed by depositing alayer of a dielectric material, e.g., silicon dioxide, and patterningthe layer of dielectric material by means of known techniques of etchingand photolithography, similar to the formation of the first dielectriclayer 202. The surface of the mask 303 need not be substantially flat,as shown in FIG. 3 a, but may be uneven. In particular, the mask 303 maycomprise a bump over the first transistor element 3.

Subsequently, the portion 302 a of the second stressed layer 302 isremoved by means of an etching process. This can be done by exposing thesemiconductor structure 1 to an etchant adapted to selectively remove amaterial of the second stressed layer 302, leaving materials of the mask303 and the first stressed layer 301 substantially intact. In otherembodiments of the present invention, the second stressed layer 302 maycomprise a thin liner layer (not shown), which is formed on theunderside thereof on the first stressed layer 301. The liner layer mayfunction as etch stop layer, protecting the first stressed layer 301from an etchant used in the etching process, and/or may provide anindication when the portion 302 a of the second stressed layer 302 isremoved.

The mask 303 can be removed after the removal of the portion 302 a ofthe second stressed layer 302. In embodiments of the present inventionwherein the mask 303 is a hard mask, the mask 303 may remain on thesemiconductor structure 1.

A dielectric layer 304 is deposited over the substrate 2. The dielectriclayer 304 can be deposited by means of known methods such as chemicalvapor deposition or plasma enhanced chemical vapor deposition. Thedielectric layer 304 may comprise silicon dioxide.

In embodiments of the present invention wherein the mask 303 is left onthe semiconductor structure 303, the dielectric layer 304 may be formedfrom substantially the same material as the mask 303. Thus, the mask 303is incorporated into the dielectric layer 304 and becomes an integralpart thereof. Correspondingly, a thickness of the dielectric layer 304over the second transistor element 4 can be greater than a thickness ofthe dielectric layer 304 over the first transistor element 3. Hence, asurface of the dielectric layer 304 is uneven.

An unevenness of the surface of the dielectric layer 304 may also resultfrom the presence of the gate electrodes 12, 13 on the surface of thesubstrate 2. A thickness of a portion of the dielectric layer 304deposited on the gate electrodes 12, 13 can be substantially equal to athickness of a portion of the dielectric layer 304 deposited, forexample, on the source regions 14, 16 and the drain regions 15, 17.Therefore, the dielectric layer 304 may comprise bumps over the gateelectrodes 12, 13. The dielectric layer 304 is planarized to obtain aplanar surface of the dielectric layer 304. This may be done by means ofchemical mechanical polishing.

Contact vias 305, 306, 307, 308, 309, 310 are formed through thedielectric layer 304, the first stressed layer 301 and/or the secondstressed layer 302. The formation of the contact vias may be performedby means of etching techniques similar to those used in the formation ofthe contact vias 205-210 in the embodiment of the present inventiondescribed above with reference to FIGS. 2 a-2 e, the first stressedlayer 301 and the second stressed layer 302 being used as etch stoplayers. Subsequently, the contact vias 305-310 are filled with anelectrically conductive material, e.g., a metal (not shown). When filledwith the electrically conductive material, the contact vias 305, 306 and307 provide electrical contact to the source region 14, the gateelectrode 12 and the drain region 15 of the first transistor element 3.Similarly, the contact vias 308, 309 and 310 provide electrical contactto the source region 16, the gate electrode 13 and the drain region 17of the second transistor element 4.

After the completion of the method described above, the first transistorelement 3 is covered with the first stressed layer 301. The secondtransistor element 4 is covered by the first stressed layer 301 and thesecond stressed layer 302. The first predetermined intrinsic stress inthe first stressed layer 301 and the second predetermined intrinsicstress in the second stressed layer 302 create elastic forces acting onthe transistor elements 3, 4, in particular on the channel regions 28,29. The stress in the channel region 28 of the first transistor element3 is influenced by the first predetermined intrinsic stress. The stressin the channel region 29 of the second transistor element 4 isinfluenced both by the first predetermined intrinsic stress and thesecond predetermined intrinsic stress.

Similar to the embodiment described above with reference to FIGS. 2 a-2e, the first predetermined stress and the second predetermined stressmay be controlled to obtain a desired stress in each of the channelregions 28, 29, or to obtain a desired charge carrier mobility in eachof the channel regions 28, 29.

The first predetermined intrinsic stress may be tensile and the secondpredetermined stress can be compressive. The predetermined intrinsicstresses can be adapted such that the channel region 28 is subjected toa tensile stress, whereas the channel region 29 is substantiallyunstressed. Thus, the mobility of holes in the channel region 29 isimproved compared to that in a transistor element having a substantiallyunstressed channel region. This is particularly advantageous inembodiments of the present invention wherein the first transistorelement 3 is an N-type transistor.

In other embodiments of the present invention, the first predeterminedstress and the second predetermined stress can be adapted such that thechannel region 28 is subjected to a compressive stress, whereas thechannel region 29 is substantially unstressed.

The first transistor element 3 and the second transistor element 4 neednot be located close to each other, as shown in FIGS. 1, 2 a-2 e and 3a-3 b. In other embodiments of the present invention, the transistorelements 3, 4 may be provided in different regions of the substrate 2.In some embodiments of the present invention, the substrate 2 comprisesa semiconductor wafer having a plurality of dies. In such embodiments,the first transistor element 3 and the second transistor element 4 canbe provided on the same die, or may be provided on different dies.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

1-12. (canceled)
 13. A method of forming a semiconductor structure,comprising: providing a substrate comprising a first transistor elementhaving a first channel region and a second transistor element having asecond channel region; forming a first stressed layer above said firsttransistor element and said second transistor element, said firststressed layer having a first predetermined intrinsic stress; forming asecond stressed layer above said first transistor element and saidsecond transistor element, said second stressed layer having a secondpredetermined intrinsic stress; and selectively removing a portion ofsaid second stressed layer located above said first transistor element;wherein said second channel region is substantially unstressed and saidfirst channel region is stressed.
 14. The method of claim 13, whereinsaid first transistor element is an N-type transistor and said secondtransistor element is a P-type transistor.
 15. The method of claim 14,wherein said first predetermined intrinsic stress is tensile and saidsecond predetermined intrinsic stress is compressive.
 16. The method ofclaim 13, wherein said second stressed layer is formed above said firststressed layer.
 17. The method of claim 12, wherein at least one of saidfirst stressed layer and said second stressed layer comprises adielectric material.
 18. The method of claim 12, further comprisingforming at least one first contact via through said first stressed layerand forming at least one second contact via through said first stressedlayer and said second stressed layer, said first contact via beinglocated above said first transistor element, said second contact viabeing located above said second transistor element. 19-24. (canceled)25. A method of forming a semiconductor structure, comprising: providinga substrate comprising a first transistor element having a first channelregion and a second transistor element having a second channel region;forming a first stressed layer above said first transistor element andsaid second transistor element, said first stressed layer having a firstpredetermined intrinsic stress; forming a second stressed layer abovesaid first stressed layer, said first transistor element and said secondtransistor element, said second stressed layer having a secondpredetermined intrinsic stress; and selectively removing a portion ofsaid second stressed layer located above said first transistor element.26. The method of claim 25, wherein said first transistor element is anN-type transistor and said second transistor element is a P-typetransistor.
 27. The method of claim 26, wherein said first predeterminedintrinsic stress is tensile and said second predetermined intrinsicstress is compressive.
 28. The method of claim 25, wherein said secondstressed layer is formed on said first stressed layer.
 29. The method ofclaim 25, wherein at least one of said first stressed layer and saidsecond stressed layer comprises a dielectric material.
 30. The method ofclaim 25, further comprising forming at least one first contact viathrough said first stressed layer and forming at least one secondcontact via through said first stressed layer and said second stressedlayer, said first contact via being located above said first transistorelement, said second contact via being located above said secondtransistor element.
 31. A method of forming a semiconductor structure,comprising: providing a substrate comprising a first transistor elementhaving a first channel region and a second transistor element having asecond channel region; forming a first stressed layer above said firsttransistor element and said second transistor element, said firststressed layer having a first predetermined intrinsic stress; forming aliner layer on said first stressed layer; forming a second stressedlayer above said liner layer, said first stressed layer, said firsttransistor element and said second transistor element, said secondstressed layer having a second predetermined intrinsic stress; andselectively removing a portion of said second stressed layer locatedabove said first transistor element.
 32. The method of claim 31, whereinsaid second channel region is substantially unstressed and said firstchannel region is stressed.
 33. The method of claim 31, wherein saidfirst transistor element is an N-type transistor and said secondtransistor element is a P-type transistor.
 34. The method of claim 33,wherein said first predetermined intrinsic stress is tensile and saidsecond predetermined intrinsic stress is compressive.
 35. The method ofclaim 31, wherein said second stressed layer is formed on said linerlayer.
 36. The method of claim 31, wherein at least one of said firststressed layer and said second stressed layer comprises a dielectricmaterial.
 37. The method of claim 31, further comprising forming atleast one first contact via through said first stressed layer and saidliner layer and forming at least one second contact via through saidfirst stressed layer, said liner layer and said second stressed layer,said first contact via being located above said first transistorelement, said second contact via being located above said secondtransistor element.